Effect of band structure discretization on the performance of full-band Monte Carlo simulation

نویسندگان

  • G. Karlowatz
  • W. Wessner
  • Hans Kosina
چکیده

Full-band Monte Carlo simulation offers a very accurate simulation technique, but is often limited by its high demand on computation time. The advantage of a numerical representation of the band structure over an analytical approximation is the accurate representation of the energy bands in the high energy regime. This allows accurate treatment of hot carrier effects in semiconductors. In this work we outline an efficient full-band Monte Carlo (FBMC) simulator and investigate the accuracy of simulation results for different meshing approaches for the Brillouin zone. © 2008 IMACS. Published by Elsevier B.V. All rights reserved.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Characterization of Carbon Nanotube (CNT) in Adsorption Gas: Monte Carlo and Langevin Dynamic Simulation

Nanostructures have considerably higher surface areas than their bulk counterparts; thereforesurfaces often play important, sometimes even dominant, roles in the nanostructure properties. Thenanocrystalline and nanotubes have low band gaps and high carrier mobility, thus offeringappealing potential as absorption gas. Interaction between methanol molecules and carbonnanotube is investigated usin...

متن کامل

Sensitivity and uncertainty analysis of sediment rating equation coefficients using the Monte-Carlo simulation (Case study: Zoshk-Abardeh watershed, Shandiz)

The sediment load estimation is essential for watershed management and soil conservation strategies. The sediment rating curve is the most common approach for estimating the sediment load when the observed sediment records are not available. With regard to the measurement errors and the limitation of available data, the sediment rating curve has a degree of uncertainty which should be accounted...

متن کامل

Hole Transport Simulations in p-channel Si MOSFETs

Hole transport is investigated in ultrasmall p-channel Si MOSFETs with gate lengths of 25 nm using the Full band Monte Carlo technique. The device simulator couples a 2D Poisson solver with a discretized 6 6 k.p Hamiltonian solver that handles the valence band-structure and includes the effect of the confining potential under the gate, thereby providing the subband structure in the channel regi...

متن کامل

Monte Carlo Simulation and Measurement of Nanoscale n-MOSFETs

The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehensive secondary ion mass spectroscopy and capacitance–voltage measurements. Good agreement between the measured output characteristics and the full...

متن کامل

Studying the Effect of Kidney Internal Structure on Beta Absorbed Dose of Radiopharmaceuticals Hg-203, Ho-166 And Y-90 Using Monte Carlo

Large quantities of radiopharmaceuticals prescribed for treatment and diagnosis are excreted through kidney. Therefore, radiation unwanted dose is created in kidney. As a result, exact calculation of prescribed radiopharmaceuticals amount is important. Monte Carlo method is used for simulation of radiation transport in body due to random nature of radiation. In this research, for the first time...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Mathematics and Computers in Simulation

دوره 79  شماره 

صفحات  -

تاریخ انتشار 2008